A 1950s Material Just Set a Modern Record For Lightning-fast Chips

'Researchers engineered a strained germanium layer on silicon that allows charge to move faster than in any silicon-compatible material to date,' reports Science Daily. 'This record mobility could lead to chips that run cooler, faster, and with dramatically lower energy consumption.

'The discovery also enhances the prospects for silicon-based quantum devices...'

Scientists from the University of Warwick and the National Research Council of Canada have reported the highest 'hole mobility' ever measured in a material that works within today's silicon-based semiconductor manufacturing.... The researchers created a nanometer-thin germanium epilayer on silicon that is placed under compressive strain. This engineered structure enables electric charge to move faster than in any previously known silicon-compatible material...

The findings establish a promising new route for ultra-fast, low-power semiconductor components. Potential uses include quantum information systems, spin qubits, cryogenic controllers for quantum processors, AI accelerators, and energy-efficient servers designed to reduce cooling demands in data centers. This achievement also represents a significant accomplishment for Warwick's Semiconductors Research Group and highlights the UK's growing influence in advanced semiconductor materials research.

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